April 4, 2013 3pm
Art and Design Building Room 2003
Dept. of Electrical and Computer Engineering, George Mason University
Abstract: Metal-Oxide-Semiconductor field effect transistor (MOSFET) has been and continues to be the basic building block for modern VLSI circuits and systems since the early eighties, by relentless shrinking of its dimensions. This scaling is now approaching fundamental, physics imposed limits, and there is thus an urgent need for alternative, “nanoelectronic” solutions. The introduction of new functional nanomaterials to replace the conventional bulk semiconductor materials will bring a bottom-up impact to all electronic devices and systems. In this presentation, I will first review the challenges in MOSFET scaling and various approaches to meet these challenges. I will then discuss our recent experimental approaches on silicon nanowire MOSFET, non-volatile memory devices, topological insulator nanowire and thin film field effect transistors. The goal of our research is to provide the most tractable transition technology to combine the advantages afforded by the emerging nanomaterials with the strengths of the semiconductor technology. In addition to achieving these new devices, new knowledge on device physics, fabrication technology and characterization metrology at the nanoscale have been generated in this research, with a broader impact on the field of micro/nanoelectronics.